Electrostatic steering of thermal emission with active metasurface control of delocalized modes.

We theoretically describe and experimentally demonstrate a graphene-integrated metasurface structure that enables electrically-tunable directional control of thermal emission. This device consists of a dielectric spacer that acts as a Fabry-Perot resonator supporting long-range delocalized modes bounded on one side by an electrostatically tunable metal-graphene metasurface. By varying the Fermi level of the graphene, the accumulated phase of the Fabry-Perot mode is shifted, which changes the direction of absorption and emission at a fixed frequency. We directly measure the frequency- and angle-dependent emissivity of the thermal emission from a fabricated device heated to 250 °C. Our results show that electrostatic control allows the thermal emission at 6.61 µm to be continuously steered over 16°, with a peak emissivity maintained above 0.9. We analyze the dynamic behavior of the thermal emission steerer theoretically using a Fano interference model, and use the model to design optimized thermal steerer structures.

Experimental demonstration of dynamic thermal regulation using vanadium dioxide thin films.

We present an experimental demonstration of passive, dynamic thermal regulation in a solid-state system with temperature-dependent thermal emissivity switching. We achieve this effect using a multilayered device, comprised of a vanadium dioxide (VO2) thin film on a silicon substrate with a gold back reflector. We experimentally characterize the optical properties of the VO2 film and use the results to optimize device design. Using a calibrated, transient calorimetry experiment we directly measure the temperature fluctuations arising from a time-varying heat load. Under laboratory conditions, we find that the device regulates temperature better than a constant emissivity sample. We use the experimental results to validate our thermal model, which can be used to predict device performance under the conditions of outer space. In this limit, thermal fluctuations are halved with reference to a constant-emissivity sample.

Hyper-selective plasmonic color filters.

The subwavelength mode volumes of plasmonic filters are well matched to the small size of state-of-the-art active pixels in CMOS image sensor arrays used in portable electronic devices. Typical plasmonic filters exhibit broad (> 100 nm) transmission bandwidths suitable for RBG or CMYK color filtering. Dramatically reducing the peak width of filter transmission spectra would allow for the realization of CMOS image sensors with multi- and hyperspectral imaging capabilities. We find that the design of 5 layer metal-insulator-metal-insulator-metal structures gives rise to multi-mode interference phenomena that suppress spurious transmission features and give rise to single transmission bands as narrow as 17 nm. The transmission peaks of these multilayer slot-mode plasmonic filters (MSPFs) can be systematically varied throughout the visible and near infrared spectrum, leading to a filter that is CMOS integrable, since the same basic MSPF structure can operate over a large range of wavelengths. We find that MSPF filter designs that can achieve a bandwidth less than 30 nm across the visible and demonstrate experimental prototypes with a FWHM of 70 nm, and we describe how experimental structure can be made to approach the limits suggested by the model.

Experimental Demonstration of >230° Phase Modulation in Gate-Tunable Graphene-Gold Reconfigurable Mid-Infrared Metasurfaces.

Metasurfaces offer significant potential to control far-field light propagation through the engineering of the amplitude, polarization, and phase at an interface. We report here the phase modulation of an electronically reconfigurable metasurface and demonstrate its utility for mid-infrared beam steering. Using a gate-tunable graphene-gold resonator geometry, we demonstrate highly tunable reflected phase at multiple wavelengths and show up to 237° phase modulation range at an operating wavelength of 8.50 µm. We observe a smooth monotonic modulation of phase with applied voltage from 0° to 206° at a wavelength of 8.70 µm. Based on these experimental data, we demonstrate with antenna array calculations an average beam steering efficiency of 23% for reflected light for angles up to 30° for this range of phases, confirming the suitability of this geometry for reconfigurable mid-infrared beam steering devices. By incorporating all nonidealities of the device into the antenna array calculations including absorption losses which could be mitigated, 1% absolute efficiency is achievable up to 30°.

Electronic modulation of infrared radiation in graphene plasmonic resonators.

All matter at finite temperatures emits electromagnetic radiation due to the thermally induced motion of particles and quasiparticles. Dynamic control of this radiation could enable the design of novel infrared sources; however, the spectral characteristics of the radiated power are dictated by the electromagnetic energy density and emissivity, which are ordinarily fixed properties of the material and temperature. Here we experimentally demonstrate tunable electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, which manifests as narrow spectral emission peaks in the mid-infrared. By continuously varying the nanoresonator carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. This work opens the door for future devices that may control blackbody radiation at timescales beyond the limits of conventional thermo-optic modulation.

Vanadium dioxide based plasmonic modulators.

Actively tunable metal-insulator-metal waveguides that employ vanadium dioxide films as the active medium are analyzed numerically. Vanadium dioxide exhibits strong contrast between the optical properties of its insulating and metallic phases. In particular, the large optical absorption in the metallic phase makes it straightforward to implement broadband attenuation modulators and switches, but this strong loss can also complicate the design of other types of devices. We present a plasmonic waveguide that functions as an index modulator with Δn > 20% at λ0 = 1,550 nm (0.80 eV), by using a thin active layer to strike a balance between maximizing index contrast while mitigating attenuation. A second device is configured as a band-stop absorption modulator, taking advantage of symmetry to selectively suppress the TM1 and TM3 modes, with relatively minimal attenuation of the TM0 and TM2 modes.

Frequency tunable near-infrared metamaterials based on VO2 phase transition.

Engineering metamaterials with tunable resonances from mid-infrared to near-infrared wavelengths could have far-reaching consequences for chip based optical devices, active filters, modulators, and sensors. Utilizing the metal-insulator phase transition in vanadium oxide (VO(2)), we demonstrate frequency-tunable metamaterials in the near-IR range, from 1.5 - 5 microns. Arrays of Ag split ring resonators (SRRs) are patterned with e-beam lithography onto planar VO(2) and etched via reactive ion etching to yield Ag/VO(2) hybrid SRRs. FTIR reflection data and FDTD simulation results show the resonant peak position red shifts upon heating above the phase transition temperature. We also show that, by including coupling elements in the design of these hybrid Ag/VO(2) bi-layer structures, we can achieve resonant peak position tuning of up to 110 nm.

PlasMOStor: a metal-oxide-Si field effect plasmonic modulator.

Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal-oxide-semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.

Electrooptic modulation in thin film barium titanate plasmonic interferometers.

We demonstrate control of the surface plasmon polariton wavevector in an active metal-dielectric plasmonic interferometer by utilizing electrooptic barium titanate as the dielectric layer. Arrays of subwavelength interferometers were fabricated from pairs of parallel slits milled in silver on barium titanate thin films. Plasmon-mediated transmission of incident light through the subwavelength slits is modulated by an external voltage applied across the barium titanate thin film. Transmitted light modulation is ascribed to two effects, electrically induced domain switching and electrooptic modulation of the barium titanate index.

Universal optical transmission features in periodic and quasiperiodic hole arrays.

We investigate the influence of array order in the optical transmission properties of subwavelength hole arrays, by comparing the experimental spectral transmittance of periodic and quasiperiodic hole arrays as a function of frequency. We find that periodicity and long-range order are not necessary requirements for obtaining enhanced and suppressed optical transmission, provided short-range order is maintained. Transmission maxima and minima are shown to result, respectively, from constructive and destructive interference at each hole, between the light incident upon and exiting from a given hole, and surface plasmon polaritons (SPPs) arriving from individual neighboring holes. These SPPs are launched along both illuminated and exit surfaces, by diffraction of the incident and emerging light at the neighboring individual subwavelength holes. By characterizing the optical transmission of a pair of subwavelength holes as a function of hole-hole distance, we demonstrate that a subwavelength hole can launch SPPs with an efficiency up to 35%, and with an experimentally determined launch phase phi = pi /2, for both input-side and exit-side SPPs. This characteristic phase has a crucial influence on the shape of the transmission spectra, determining transmission minima in periodic arrays at those frequencies where grating coupling arguments would instead predict maxima.

Plasmonic nanostructure design for efficient light coupling into solar cells.

We demonstrate that subwavelength scatterers can couple sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated with a corrugated metal film. Using numerical simulations, we find that incoupling of sunlight is remarkably insensitive to incident angle, and that the spectral features of the coupling efficiency originate from several different resonant phenomena. The incoupling cross section can be spectrally tuned and enhanced through modification of the scatterer shape, semiconductor film thickness, and materials choice. We demonstrate that, for example, a single 100 nm wide groove under a 200 nm Si thin film can enhance absorption by a factor of 2.5 over a 10 microm area for the portion of the solar spectrum near the Si band gap. These findings show promise for the design of ultrathin solar cells that exhibit enhanced absorption.

Plasmonic modes of annular nanoresonators imaged by spectrally resolved cathodoluminescence.

We report the observation of plasmonic modes of annular resonators in nanofabricated Ag and Au surfaces that are imaged by spectrally resolved cathodoluminescence. A highly focused 30 keV electron beam is used to excite localized surface plasmons that couple to collective resonant modes of the nanoresonators. We demonstrate unprecedented resolution of plasmonic mode excitation and by combining these observations with full-field simulations find that cathodoluminescence in plasmonic nanostructures is most efficiently excited at positions corresponding to antinodes in the modal electric field intensity.